DMP10H4D2S-7 - Diodes Incorporated

Manufacturer Part Number

DMP10H4D2S-7

Manufacturer

Diodes Incorporated

Introduction

P-Channel MOSFET Transistor

Product Features and Performance

100V Drain to Source Voltage (Vdss)

±20V Gate to Source Voltage (Vgs)

2Ω Drain-Source On-Resistance (Rds(on)) at 500mA, 10V

270mA Continuous Drain Current (Id) at 25°C

87pF Input Capacitance (Ciss) at 25V

380mW Power Dissipation (Max) at 25°C

-55°C to 150°C Operating Temperature Range

Product Advantages

Low On-Resistance for efficient power switching

High voltage capability for various applications

Small SOT-23-3 package for compact designs

Wide operating temperature range

Key Technical Parameters

MOSFET Technology

P-Channel FET Type

3V Gate Threshold Voltage (Vgs(th)) at 250μA

4V/10V Drive Voltage Range for Rds(on)

8nC Gate Charge (Qg) at 10V

Quality and Safety Features

RoHS3 Compliant

Tape and Reel Packaging

Compatibility

Compatible with various electronic circuits and systems

Application Areas

Power management circuits

Switching circuits

Amplifier circuits

Motor control applications

Product Lifecycle

Current product offering, no indication of discontinuation

Replacements and upgrades likely available from the manufacturer

Key Reasons to Choose

Excellent performance characteristics for power switching

Small and compact package for space-constrained designs

Wide operating temperature range for diverse applications

RoHS compliance for environmental responsibility

Reliable quality and safety features