Manufacturer Part Number
DMP10H400SE-13
Manufacturer
Diodes Incorporated
Introduction
P-channel MOSFET transistor with high performance and small package size
Product Features and Performance
P-channel MOSFET transistor
100V drain-source voltage rating
250mOhm maximum on-resistance at 5A, 10V
3A continuous drain current at 25°C ambient
6A continuous drain current at 25°C case temperature
1239pF maximum input capacitance at 25V
2W maximum power dissipation at 25°C ambient
7W maximum power dissipation at 25°C case temperature
-55°C to 150°C operating temperature range
Product Advantages
High voltage and current handling capability
Low on-resistance for efficient power switching
Small SOT-223-3 surface mount package
Key Technical Parameters
Drain-Source Voltage (Vdss): 100V
Gate-Source Voltage (Vgs) Max: ±20V
On-Resistance (Rds(on)) Max: 250mOhm @ 5A, 10V
Continuous Drain Current (Id): 2.3A (Ta), 6A (Tc)
Input Capacitance (Ciss) Max: 1239pF @ 25V
Power Dissipation Max: 2W (Ta), 13.7W (Tc)
Quality and Safety Features
RoHS3 compliant
AEC-Q101 qualified
Compatibility
Compatible with common MOSFET driver circuits
Application Areas
Power switching applications
Motor control
DC-DC converters
Amplifier circuits
Product Lifecycle
Current production, no plans for discontinuation
Replacements and upgrades available as needed
Key Reasons to Choose This Product
High voltage and current handling capability
Low on-resistance for efficient power switching
Small surface mount package for compact designs
Wide operating temperature range
RoHS3 compliance for environmental responsibility
AEC-Q101 qualification for automotive reliability