DMN3030LSS-13 - Diodes Incorporated

Manufacturer Part Number

DMN3030LSS-13

Manufacturer

Diodes Incorporated

Introduction

The DMN3030LSS-13 is a N-channel MOSFET transistor designed for a wide range of applications, including power management, switching, and amplification circuits.

Product Features and Performance

30V drain-to-source voltage (Vdss)

9A continuous drain current (Id)

18mΩ maximum on-resistance (Rds(on)) at 9A, 10V

741pF maximum input capacitance (Ciss) at 15V

5W maximum power dissipation (Ta)

-55°C to 150°C operating temperature range

Product Advantages

Efficient power switching and control

Low on-resistance for low power loss

Wide operating temperature range

Small 8-SOIC package for compact designs

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 30V

Gate-to-Source Voltage (Vgs): ±25V

On-Resistance (Rds(on)): 18mΩ @ 9A, 10V

Continuous Drain Current (Id): 9A (Ta)

Input Capacitance (Ciss): 741pF @ 15V

Power Dissipation (Max): 2.5W (Ta)

Quality and Safety Features

RoHS3 compliant

Suitable for lead-free reflow soldering

Compatibility

The DMN3030LSS-13 is a direct replacement for similar N-channel MOSFET transistors in power management and switching applications.

Application Areas

Power supplies

Motor drives

Switching power amplifiers

Battery chargers

General-purpose power switching

Product Lifecycle

The DMN3030LSS-13 is an actively supported product, with no indication of discontinued production or impending obsolescence. Replacement and upgrade options are available from Diodes Incorporated.

Key Reasons to Choose

Excellent performance-to-size ratio with low on-resistance and high current capability

Wide operating temperature range for versatile applications

Small 8-SOIC package for compact design

RoHS3 compliance for environmentally-friendly use

Reliable and well-supported product from a reputable manufacturer