Manufacturer Part Number
DMN3030LFG-7
Manufacturer
Diodes Incorporated
Introduction
High-performance N-channel MOSFET transistor
Product Features and Performance
30V Drain-Source Voltage
3A Continuous Drain Current
18mΩ On-Resistance
751pF Input Capacitance
4nC Gate Charge
-55°C to 150°C Operating Temperature Range
Product Advantages
Low on-resistance for efficient power switching
High current handling capability
Small surface-mount package for compact designs
Wide operating temperature range
Key Technical Parameters
Drain-Source Voltage (Vdss): 30V
Gate-Source Voltage (Vgs): ±25V
On-Resistance (Rds(on)): 18mΩ
Continuous Drain Current (Id): 5.3A
Input Capacitance (Ciss): 751pF
Power Dissipation (Pd): 900mW
Quality and Safety Features
RoHS3 compliant
Reliability tested for industrial applications
Compatibility
Suitable for various power switching and amplification applications
Application Areas
Power supplies
Motor drives
Lighting systems
Industrial controls
Product Lifecycle
Current product, no discontinuation plans
Replacements and upgrades available if needed
Key Reasons to Choose This Product
Excellent efficiency and power handling
Compact surface-mount package
Wide operating temperature range
Robust and reliable performance
Suitable for a variety of power electronics applications