DMN2320UFB4-7B - Diodes Incorporated

Manufacturer Part Number

DMN2320UFB4-7B

Manufacturer

Diodes Incorporated

Introduction

This product is a Discrete Semiconductor device, specifically a Transistor - FET, MOSFET - Single.

Product Features and Performance

N-Channel MOSFET

Drain to Source Voltage (Vdss) of 20V

Maximum Gate-Source Voltage (Vgs) of ±8V

On-Resistance (Rds(on)) of 320mΩ @ 500mA, 4.5V

Continuous Drain Current (Id) of 1A at 25°C

Input Capacitance (Ciss) of 71pF @ 10V

Power Dissipation of 520mW at 25°C

Gate Charge (Qg) of 0.89nC @ 4.5V

Product Advantages

Low on-resistance for efficient power switching

Wide temperature range of -55°C to 150°C

Small X2-DFN1006-3 surface mount package

Key Technical Parameters

Drain to Source Voltage (Vdss): 20V

Gate-Source Voltage (Vgs): ±8V

On-Resistance (Rds(on)): 320mΩ @ 500mA, 4.5V

Continuous Drain Current (Id): 1A at 25°C

Input Capacitance (Ciss): 71pF @ 10V

Power Dissipation: 520mW at 25°C

Gate Charge (Qg): 0.89nC @ 4.5V

Quality and Safety Features

RoHS3 compliant

Compatibility

Surface mount package (X2-DFN1006-3)

Application Areas

Suitable for power management, switching, and control applications

Product Lifecycle

This product is currently available and not nearing discontinuation.

Replacements or upgrades may be available in the future.

Key Reasons to Choose This Product

Low on-resistance for efficient power switching

Wide temperature range of -55°C to 150°C

Small surface mount package

RoHS3 compliance for environmental responsibility