Manufacturer Part Number
DMN2300UFB4-7B
Manufacturer
Diodes Incorporated
Introduction
Low Voltage N-Channel MOSFET
Product Features and Performance
N-Channel MOSFET with low on-resistance and gate charge
High switching speed and low power dissipation
Suitable for low voltage, high-current switching applications
Product Advantages
Excellent power efficiency
Small footprint package
Reliable performance
Key Technical Parameters
Drain to Source Voltage (Vdss): 20V
Gate-Source Voltage (Vgs): ±8V
On-Resistance (Rds(on)): 175mΩ @ 300mA, 4.5V
Drain Current (Id): 1.3A (Ta)
Input Capacitance (Ciss): 64.3pF @ 25V
Power Dissipation (Max): 500mW (Ta)
Quality and Safety Features
ROHS3 Compliant
Designed for reliable and safe operation
Compatibility
Surface mount package (X2-DFN1006-3)
Suitable for use in a variety of electronic circuits and applications
Application Areas
Low voltage, high-current switching applications
Power management circuits
Audio/Video equipment
Industrial control systems
Product Lifecycle
Currently in production
No discontinuation or replacement planned
Several Key Reasons to Choose This Product
Excellent power efficiency and low power dissipation
Compact and space-saving package
Reliable and safe operation
Suitable for a wide range of low voltage, high-current applications