DMMT5401-7-F - Diodes Incorporated

Manufacturer Part Number

DMMT5401-7-F

Manufacturer

Diodes Incorporated

Introduction

Dual PNP Bipolar Junction Transistor (BJT) Array

Product Features and Performance

Matched pair of PNP transistors

High frequency operation up to 300 MHz

Low collector-emitter saturation voltage

High DC current gain of 60 or more

Low collector cutoff current of 50 nA or less

Wide operating temperature range of -55°C to 150°C

Low power dissipation of 300 mW

Product Advantages

Optimized for high-frequency switching and amplification applications

Compact surface mount package (SOT-23-6)

Consistent performance due to tight matching between transistors

Reliable operation in harsh environments

Key Technical Parameters

Collector-Emitter Breakdown Voltage: 150V

Collector Current (Max): 200mA

Collector Cutoff Current: 50nA

Collector-Emitter Saturation Voltage: 500mV

Quality and Safety Features

RoHS3 compliant

AEC-Q101 qualified

Compatibility

Suitable for a wide range of electronic circuits requiring high-frequency, high-gain PNP transistors, such as:

Amplifiers

Switches

Logic gates

Current mirrors

Biasing circuits

Application Areas

Audio/video equipment

Communications systems

Industrial control

Automotive electronics

Product Lifecycle

The DMMT5401 is an active, in-production product

Replacement or upgrade options available from Diodes Incorporated

Several Key Reasons to Choose This Product

Excellent high-frequency performance up to 300 MHz

Tight matching between the two PNP transistors for consistent behavior

Wide operating temperature range and low power dissipation

Reliable surface mount package and RoHS3 compliance

Proven track record in a variety of electronic applications