DMMT3904W-7-F - Diodes Incorporated

Manufacturer Part Number

DMMT3904W-7-F

Manufacturer

Diodes Incorporated

Introduction

Dual NPN Bipolar Junction Transistor (BJT) Array

Product Features and Performance

Matched pair of NPN transistors

High-frequency performance up to 300 MHz

Low collector-emitter saturation voltage

Wide operating temperature range from -65°C to 150°C

Low power dissipation of 200 mW

Product Advantages

Suitable for high-frequency switching and amplification applications

Excellent thermal stability and reliability

Space-saving 6-pin TSSOP (SOT-363) package

Key Technical Parameters

Collector-Emitter Breakdown Voltage (VCEO): 40 V

Collector Current (IC): 200 mA

DC Current Gain (hFE): 100 @ 10 mA, 1 V

Collector-Emitter Saturation Voltage (VCE(sat)): 300 mV @ 5 mA, 50 mA

Quality and Safety Features

RoHS3 compliant

Compatibility

Can be used as a replacement or upgrade for various NPN transistor arrays

Application Areas

High-frequency switching and amplification circuits

Audio amplifiers

Analog and digital logic circuits

RF and wireless applications

Product Lifecycle

Currently available, no plans for discontinuation

Several Key Reasons to Choose This Product

Excellent high-frequency performance up to 300 MHz

Low power dissipation and wide operating temperature range

Matched pair design for improved thermal stability and reliability

Space-saving 6-pin TSSOP (SOT-363) package for compact PCB layouts

RoHS3 compliance for environmentally friendly applications