Manufacturer Part Number
DMG1012TQ-7
Manufacturer
Diodes Incorporated
Introduction
N-Channel MOSFET transistor suitable for automotive and industrial applications
Product Features and Performance
Drain-to-Source Voltage (Vdss) of 20V
Gate-to-Source Voltage (Vgs) of ±6V
On-Resistance (Rds(on)) of 400mΩ @ 600mA, 4.5V
Continuous Drain Current (Id) of 630mA at 25°C
Input Capacitance (Ciss) of 60.67pF @ 16V
Power Dissipation (Pd) of 280mW at 25°C
Product Advantages
High efficiency
Low on-resistance
Automotive-grade AEC-Q101 qualified
Compact SOT-523 surface-mount package
Key Technical Parameters
MOSFET technology
N-Channel
Threshold Voltage (Vgs(th)) of 1V @ 250μA
Drive Voltage (Vgs) of 1.8V (min Rds(on)), 4.5V (max Rds(on))
Gate Charge (Qg) of 0.74nC @ 4.5V
Quality and Safety Features
RoHS3 compliant
Tape and reel packaging
Compatibility
Suitable for automotive and industrial applications
Application Areas
Power management
Motor control
Automotive electronics
Product Lifecycle
Currently in production
Replacements and upgrades available
Key Reasons to Choose This Product
Automotive-grade quality and reliability
Efficient performance with low on-resistance
Compact size for space-constrained designs
Broad operating temperature range of -55°C to 150°C
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