DMG1012T-7 - Diodes Incorporated

Manufacturer Part Number

DMG1012T-7

Manufacturer

Diodes Incorporated

Introduction

Low Voltage, N-Channel MOSFET

Product Features and Performance

N-Channel MOSFET

Low on-resistance of 400 mΩ (max) at 600 mA, 4.5 V

Low input capacitance of 60.67 pF (max) at 16 V

Low gate charge of 0.74 nC (max) at 4.5 V

Wide operating temperature range of -55°C to 150°C

Product Advantages

Compact SOT-523 surface-mount package

Suitable for low-voltage, high-efficiency power conversion applications

Excellent thermal performance

Key Technical Parameters

Drain to Source Voltage (Vdss): 20 V

Gate to Source Voltage (Vgs): ±6 V

Continuous Drain Current (Id): 630 mA at 25°C

Power Dissipation (Max): 280 mW at 25°C

Gate Threshold Voltage (Vgs(th)): 1 V (max) at 250 μA

Quality and Safety Features

RoHS3 compliant

Reliable MOSFET design

Compatibility

Compatible with a wide range of electronic devices and circuits requiring low-voltage, high-efficiency power switching

Application Areas

Ideal for low-voltage, high-efficiency power conversion applications

Suitable for use in consumer electronics, industrial equipment, and other electronic devices

Product Lifecycle

This product is currently in production and available for purchase

Replacement or upgrade options may be available in the future as technology evolves

Key Reasons to Choose This Product

Excellent performance characteristics, including low on-resistance, input capacitance, and gate charge

Compact and efficient surface-mount package design

Wide operating temperature range and RoHS3 compliance for reliable operation

Suitable for a variety of low-voltage, high-efficiency power conversion applications