DDTC115ECA-7-F - Diodes Incorporated

Manufacturer Part Number

DDTC115ECA-7-F

Manufacturer

Diodes Incorporated

Introduction

NPN pre-biased bipolar junction transistor (BJT) in a SOT-23-3 package.

Product Features and Performance

Power rating of 200 mW

Collector-emitter breakdown voltage of 50 V

Collector current (max) of 100 mA

Collector cutoff current (max) of 500 nA

Vce saturation voltage of 300 mV @ 250 μA, 5 mA

DC current gain (hFE) of 82 min @ 5 mA, 5 V

Transition frequency of 250 MHz

Internal base and emitter resistors of 100 kΩ

Product Advantages

Pre-biased design simplifies circuit design

Small SOT-23-3 surface mount package

High performance and reliability

Key Technical Parameters

Power rating: 200 mW

Collector-emitter breakdown voltage: 50 V

Collector current (max): 100 mA

DC current gain (hFE): 82 min @ 5 mA, 5 V

Transition frequency: 250 MHz

Internal base and emitter resistors: 100 kΩ

Quality and Safety Features

RoHS3 compliant

Tape and reel packaging

Compatibility

Compatible with standard SOT-23-3 footprint and mounting

Application Areas

Suitable for use in amplifiers, switches, and logic circuits in various electronic devices

Product Lifecycle

Currently in production

No known plans for discontinuation

Replacements and upgrades may be available

Key Reasons to Choose This Product

Optimized performance with pre-biased design

Small and compact SOT-23-3 package

High reliability and RoHS compliance

Broad compatibility and application versatility