DDTC114YCA-7-F - Diodes Incorporated

Manufacturer Part Number

DDTC114YCA-7-F

Manufacturer

Diodes Incorporated

Introduction

Discrete Bipolar Junction Transistor (BJT) with pre-biased base-emitter junction

Product Features and Performance

Optimized for high-speed switching applications

High frequency transition up to 250 MHz

Low collector-emitter saturation voltage

Pre-biased base-emitter junction for simplified biasing circuit

Product Advantages

Simplified circuit design with pre-biased base-emitter junction

High-speed switching capability

Low power consumption

Key Technical Parameters

Power Rating: 200 mW

Collector-Emitter Breakdown Voltage: 50 V

Collector Current (Max): 100 mA

Collector Cutoff Current: 500 nA

DC Current Gain: 68 min @ 5 mA, 5 V

Base Resistor: 10 kΩ

Emitter-Base Resistor: 47 kΩ

Quality and Safety Features

RoHS3 compliant

Compatibility

SOT-23-3 surface mount package

Application Areas

High-speed switching circuits

Logic gates

Amplifier circuits

Product Lifecycle

Currently in production

No known plans for discontinuation

Key Reasons to Choose This Product

Simplified circuit design with pre-biased base-emitter junction

High-speed switching capability up to 250 MHz

Low power consumption

Reliable and RoHS3 compliant