Manufacturer Part Number
BSS127S-7
Manufacturer
Diodes Incorporated
Introduction
N-Channel MOSFET Transistor
Product Features and Performance
Designed for general-purpose switching and amplification applications
Operates over a wide temperature range of -55°C to 150°C
Low on-resistance and low gate charge for efficient switching
Product Advantages
High breakdown voltage up to 600V
Low on-resistance of 160Ω
Compact SOT-23-3 package
Key Technical Parameters
Drain to Source Voltage (Vdss): 600V
Gate-Source Voltage (Vgs): ±20V
Continuous Drain Current (Id): 50mA
On-Resistance (Rds(on)): 160Ω
Input Capacitance (Ciss): 21.8pF
Power Dissipation (Pd): 610mW
Quality and Safety Features
RoHS3 compliant
Meets industry safety and reliability standards
Compatibility
Compatible with various electronic circuits and systems requiring a small, high-voltage MOSFET
Application Areas
General-purpose switching and amplification
Low-power electronic devices
Power supplies and converters
Product Lifecycle
This product is an active and widely available MOSFET solution
Replacement or upgraded models may become available in the future as technology evolves
Key Reasons to Choose This Product
High breakdown voltage for a wide range of applications
Low on-resistance for efficient switching
Compact and space-saving SOT-23-3 package
Reliable performance over a wide temperature range
RoHS3 compliance for environmental responsibility
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