BCW66HTA - Diodes Incorporated

Manufacturer Part Number

BCW66HTA

Manufacturer

Diodes Incorporated

Introduction

The BCW66HTA is a high-performance NPN bipolar junction transistor (BJT) designed for a wide range of general-purpose applications.

Product Features and Performance

High collector-emitter breakdown voltage of 45V

High collector current capability of up to 800mA

High DC current gain (hFE) of 250 minimum at 100mA, 1V

High transition frequency of 100MHz

Low collector-emitter saturation voltage of 700mV at 50mA, 500mA

Wide operating temperature range of -55°C to 150°C

Product Advantages

Excellent performance characteristics for a wide range of applications

Compact surface-mount SOT-23-3 package

RoHS3 compliant for environmentally friendly use

Readily available in tape and reel packaging

Key Technical Parameters

Collector-Emitter Breakdown Voltage (VCEO): 45V

Collector Current (IC): 800mA

Collector Cutoff Current (ICBO): 20nA

DC Current Gain (hFE): 250 minimum at 100mA, 1V

Transition Frequency (fT): 100MHz

Power Dissipation: 330mW

Quality and Safety Features

Compliant with RoHS3 environmental standards

Tested and qualified for reliable performance

Compatibility

Compatible with a wide range of electronic circuits and systems

Application Areas

General-purpose amplifier and switch applications

Medium-power audio and radio frequency (RF) circuits

Industrial control and automation systems

Consumer electronics and household appliances

Product Lifecycle

Currently in active production

No plans for discontinuation at this time

Replacement or upgrade options may be available in the future

Key Reasons to Choose This Product

Excellent performance characteristics for a wide range of applications

Compact and space-saving surface-mount package

RoHS3 compliance for environmentally friendly use

Readily available in tape and reel packaging for efficient manufacturing

Reliable and well-tested for consistent performance