Manufacturer Part Number
BCW66GLT1G
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
Bipolar Junction Transistor (BJT) Single
Product Features and Performance
TO-236-3, SC-59, SOT-23-3 package
Operating Temperature: -55°C to 150°C
Power Rating: 300 mW
Collector-Emitter Breakdown Voltage: 45 V
Collector Current (Max): 800 mA
Collector Cutoff Current (Max): 20 nA
Collector-Emitter Saturation Voltage: 700 mV @ 50 mA, 500 mA
DC Current Gain (hFE): 160 Min. @ 100 mA, 1 V
Transition Frequency: 100 MHz
Product Advantages
Compact surface mount package
Wide operating temperature range
High power and voltage handling capability
Low saturation voltage for efficient operation
High current gain for amplifier and switching applications
Key Technical Parameters
Transistor Type: NPN
RoHS Compliance: RoHS3 Compliant
Packaging: Tape & Reel (TR)
Quality and Safety Features
Reliable performance in a wide range of applications
Compliance with RoHS3 directives for environmental safety
Compatibility
Suitable for a variety of electronic circuit designs and applications
Application Areas
Amplifiers
Switches
Drivers
Logic circuits
General-purpose electronics
Product Lifecycle
Current product offering
Replacements and upgrades may be available
Key Reasons to Choose This Product
Excellent power and voltage handling capabilities
High current gain for efficient amplification and switching
Wide operating temperature range for versatile applications
Surface mount package for compact circuit design
RoHS3 compliance for environmentally friendly use