BC847CW-7-F - Diodes Incorporated

Manufacturer Part Number

BC847CW-7-F

Manufacturer

Diodes Incorporated

Introduction

Discrete Semiconductor Product

Transistor Bipolar (BJT) Single

Product Features and Performance

RoHS3 Compliant

SOT-323 package

Operating temperature: -65°C to 150°C (TJ)

Power rating: 200 mW

Collector-Emitter Breakdown Voltage: 45 V

Collector Current (max): 100 mA

Collector Cutoff Current (max): 20 nA

Collector-Emitter Saturation Voltage: 600 mV @ 5 mA, 100 mA

Transistor Type: NPN

DC Current Gain (min): 420 @ 2 mA, 5 V

Transition Frequency: 300 MHz

Product Advantages

Small, surface-mount package

High power and voltage ratings

Low saturation voltage

High current gain

High-frequency performance

Key Technical Parameters

Power rating: 200 mW

Collector-Emitter Breakdown Voltage: 45 V

Collector Current (max): 100 mA

Transistor Type: NPN

DC Current Gain (min): 420

Transition Frequency: 300 MHz

Quality and Safety Features

RoHS3 compliant

Suitable for high-temperature applications

Compatibility

Can be used as a replacement or upgrade for similar NPN bipolar transistors in surface-mount applications

Application Areas

Amplifiers

Switches

Logic gates

Drivers

General-purpose electronic circuits

Product Lifecycle

Currently in production

Readily available

No plans for discontinuation

Several Key Reasons to Choose This Product

Compact, surface-mount package

High power and voltage ratings

Low saturation voltage for efficient operation

High current gain for strong amplification

High-frequency performance for fast switching

RoHS3 compliance for environmental friendliness

Suitable for high-temperature applications