Manufacturer Part Number
BC847CWT1G
Manufacturer
onsemi
Introduction
The BC847CWT1G is a discrete NPN bipolar junction transistor (BJT) from onsemi.
Product Features and Performance
Operates at a maximum collector-emitter voltage of 45V
Supports a maximum collector current of 100mA
Provides a minimum DC current gain (hFE) of 420 at 2mA and 5V
Has a transition frequency of 100MHz
Designed for surface mount applications
Product Advantages
Compact SC-70 surface mount package
Wide operating temperature range of -55°C to 150°C
RoHS-3 compliant
Key Technical Parameters
Power Rating: 150mW
Collector-Emitter Breakdown Voltage (Max): 45V
Collector Current (Max): 100mA
Collector Cutoff Current (Max): 15nA
Collector-Emitter Saturation Voltage (Max): 600mV @ 5mA, 100mA
Quality and Safety Features
RoHS-3 compliant
Reliable surface mount package
Compatibility
The BC847CWT1G is a standard NPN bipolar transistor and is compatible with a wide range of electronic circuits and applications.
Application Areas
General-purpose amplifier and switching applications
Automotive electronics
Industrial control systems
Consumer electronics
Product Lifecycle
The BC847CWT1G is an active and readily available product. Replacements and upgrades may be available from onsemi and other manufacturers.
Key Reasons to Choose This Product
Compact surface mount package
Wide operating temperature range
High DC current gain and transition frequency
RoHS-3 compliance for environmental safety
Compatibility with a broad range of electronic applications