BC847BVN-7 - Diodes Incorporated

Manufacturer Part Number

BC847BVN-7

Manufacturer

Diodes Incorporated

Introduction

Bipolar Junction Transistor (BJT) Array

Product Features and Performance

Arrays 2 NPN and 2 PNP transistors in a single package

High frequency operation up to 300 MHz for NPN and 200 MHz for PNP

Low collector-emitter saturation voltage

Low collector cutoff current

Wide operating temperature range from -65°C to 150°C

Product Advantages

Compact size in SOT-563 and SOT-666 packages

Optimized for high-frequency, high-speed switching applications

Suitable for high-density circuit designs

Robust and reliable performance

Key Technical Parameters

Power rating: 150 mW

Collector-emitter breakdown voltage: 45 V

Collector current: 100 mA

Collector cutoff current: 15 nA

DC current gain (hFE): 200-220

Quality and Safety Features

RoHS3 compliant

AEC-Q101 qualified

Compatibility

Compatible with a wide range of electronic circuits and systems requiring high-frequency, high-speed bipolar transistor arrays.

Application Areas

Switching circuits

Amplifier circuits

Logic gates

High-speed digital circuits

Communication systems

Product Lifecycle

The BC847BVN-7 is an active and widely available product. No discontinuation or replacement is currently planned.

Key Reasons to Choose This Product

High-frequency operation up to 300 MHz for NPN and 200 MHz for PNP, enabling high-speed switching and amplification.

Low collector-emitter saturation voltage and collector cutoff current for efficient and low-power circuit performance.

Wide operating temperature range from -65°C to 150°C, ensuring reliable operation in diverse environmental conditions.

Compact SOT-563 and SOT-666 package options for high-density circuit designs.

RoHS3 compliance and AEC-Q101 qualification for quality and safety assurance.