BC847BTT1G - onsemi

Manufacturer Part Number

BC847BTT1G

Manufacturer

onsemi

Introduction

The BC847BTT1G is a single NPN bipolar junction transistor (BJT) from onsemi, a leading manufacturer of semiconductor devices.

Product Features and Performance

Optimized for high-frequency applications up to 100 MHz

Low collector-emitter saturation voltage (Vce(sat)) of 600 mV at 5 mA, 100 mA

High DC current gain (hFE) of 200 minimum at 2 mA, 5 V

Low collector cutoff current (ICBO) of 15 nA maximum

Capable of handling up to 225 mW of power

Product Advantages

Excellent high-frequency performance

Low noise and distortion

High reliability and stability

Key Technical Parameters

Collector-Emitter Breakdown Voltage (VCEO): 45 V

Collector Current (IC): 100 mA

Power Dissipation (Ptot): 225 mW

Operating Temperature Range: -55°C to 150°C

Quality and Safety Features

RoHS3 compliant

Compact SC-75 and SOT-416 surface-mount package options

Compatibility

Suitable for a wide range of electronic circuits and applications

Application Areas

Amplifiers

Switches

Drivers

Logic gates

Oscillators

Pulse circuits

Product Lifecycle

The BC847BTT1G is an active and widely available product from onsemi.

Replacements and upgrades may be available, depending on specific application requirements.

Key Reasons to Choose This Product

High-frequency performance up to 100 MHz

Low noise and distortion

Small, surface-mount package options

RoHS3 compliance for environmental responsibility

Proven reliability and stability from a leading semiconductor manufacturer