BC847BQ-7-F - Diodes Incorporated

Manufacturer Part Number

BC847BQ-7-F

Manufacturer

Diodes Incorporated

Introduction

NPN Bipolar Junction Transistor (BJT) for general purpose and switching applications.

Product Features and Performance

Designed for general purpose and switching applications

High voltage and current handling capability

High frequency performance up to 300 MHz

Low collector-emitter saturation voltage

Wide operating temperature range of -65°C to 150°C

Product Advantages

Robust design for reliable performance

Excellent thermal stability

Suitable for high-volume manufacturing

Cost-effective solution

Key Technical Parameters

Collector-Emitter Breakdown Voltage (VCEO): 45 V

Collector Current (IC): 100 mA

Collector Power Dissipation (PC): 310 mW

DC Current Gain (hFE): 200 (min) @ 2 mA, 5 V

Transition Frequency (fT): 300 MHz

Quality and Safety Features

RoHS3 compliant

AEC-Q101 qualified for automotive applications

Manufactured in an ISO-certified facility

Compatibility

Suitable for surface mount applications

Compatible with standard SMT assembly processes

Application Areas

General purpose and switching applications

Automotive electronics

Industrial control systems

Consumer electronics

Product Lifecycle

Currently in active production

No plans for discontinuation

Replacement or upgrade options available

Key Reasons to Choose This Product

Reliable and robust performance

High frequency and power handling capabilities

Cost-effective solution for mass production

Compliance with industry standards and regulations

Broad range of compatible applications