BC847BPDXV6T1G - onsemi

Manufacturer Part Number

BC847BPDXV6T1G

Manufacturer

onsemi

Introduction

This is a Bipolar Junction Transistor (BJT) array from onsemi.

It is part of the BC847 series of discrete semiconductor products.

Product Features and Performance

Operates at temperatures from -55°C to 150°C

Maximum power dissipation of 357mW

Breakdown voltage up to 45V

Maximum collector current of 100mA

Current gain (hFE) of at least 200 at 2mA, 5V

Transition frequency of 100MHz

Product Advantages

Compact SOT-563 surface mount package

Low noise and distortion performance

High reliability and stability

Key Technical Parameters

Package: SOT-563, SOT-666

RoHS compliance: RoHS3

Collector-Emitter Breakdown Voltage (max): 45V

Collector Current (max): 100mA

Collector Cutoff Current (max): 15nA

Collector-Emitter Saturation Voltage (max): 600mV

Quality and Safety Features

Compliant with RoHS3 environmental regulations

Reliable operation within the specified temperature range

Compatibility

Suitable for use in a wide range of electronic circuits and applications

Application Areas

Commonly used in amplifiers, switches, and logic circuits

Applicable in consumer electronics, industrial equipment, and telecommunications

Product Lifecycle

This is an active product with no discontinuation plans

Replacements and upgrades may be available as technology advances

Key Reasons to Choose This Product

Excellent electrical performance and reliability

Compact surface mount packaging for efficient board space utilization

Compliance with RoHS environmental regulations

Broad compatibility and applicability across various electronic applications