BC847BPDW1T3G - onsemi

Manufacturer Part Number

BC847BPDW1T3G

Manufacturer

onsemi

Introduction

The BC847BPDW1T3G is a discrete semiconductor product from onsemi, specifically a transistor in the Bipolar Junction Transistor (BJT) array category.

Product Features and Performance

Operating temperature range of -55°C to 150°C (TJ)

Maximum power dissipation of 380mW

Maximum collector-emitter breakdown voltage of 45V

Maximum collector current of 100mA

Maximum collector cutoff current of 15nA (ICBO)

Collector-emitter saturation voltage of 600mV @ 5mA, 100mA / 650mV @ 5mA, 100mA

NPN and PNP transistor types

Minimum DC current gain (hFE) of 200 @ 2mA, 5V

Transition frequency of 100MHz

Surface mount packaging (SC-88/SC70-6/SOT-363)

Product Advantages

Wide operating temperature range

High power dissipation capability

High collector-emitter breakdown voltage

Low collector cutoff current

Low collector-emitter saturation voltage

Versatile transistor types (NPN and PNP)

High DC current gain

High transition frequency

Compact surface mount packaging

Key Technical Parameters

Operating temperature range: -55°C to 150°C (TJ)

Maximum power dissipation: 380mW

Maximum collector-emitter breakdown voltage: 45V

Maximum collector current: 100mA

Maximum collector cutoff current: 15nA (ICBO)

Collector-emitter saturation voltage: 600mV @ 5mA, 100mA / 650mV @ 5mA, 100mA

Transistor type: NPN and PNP

Minimum DC current gain (hFE): 200 @ 2mA, 5V

Transition frequency: 100MHz

Quality and Safety Features

RoHS3 compliant

Manufactured in a quality-controlled environment

Compatibility

The BC847BPDW1T3G is a surface mount device with SC-88/SC70-6/SOT-363 packaging, suitable for various electronic applications.

Application Areas

Suitable for a wide range of electronic applications, such as amplifiers, switches, and logic circuits.

Product Lifecycle

The BC847BPDW1T3G is an active product and is not nearing discontinuation.

Replacement or upgrade options may be available, depending on the specific application requirements.

Key Reasons to Choose This Product

Wide operating temperature range for reliable performance in diverse environments

High power dissipation capability for efficient heat management

High collector-emitter breakdown voltage for increased circuit protection

Low collector cutoff current for improved circuit stability

Low collector-emitter saturation voltage for efficient signal transmission

Versatile transistor types (NPN and PNP) for diverse circuit design requirements

High DC current gain and transition frequency for enhanced circuit performance

Compact surface mount packaging for space-constrained applications

RoHS3 compliance for environmentally-friendly usage