BC847A-7-F - Diodes Incorporated

Manufacturer Part Number

BC847A-7-F

Manufacturer

Diodes Incorporated

Introduction

Bipolar Junction Transistor (BJT), NPN type, small signal transistor

Product Features and Performance

Wide operating temperature range: -65°C to 150°C

Low power consumption: Max. 300mW

High current gain: Min. 110 @ 2mA, 5V

High transition frequency: 300MHz

Low collector-emitter saturation voltage: Max. 600mV @ 5mA, 100mA

Product Advantages

Reliable performance in a wide range of applications

Compact and space-saving SOT-23-3 package

RoHS3 compliant for environmentally-friendly use

Key Technical Parameters

Collector-Emitter Breakdown Voltage (Max): 45V

Collector Current (Max): 100mA

Collector Cutoff Current (Max): 15nA

DC Current Gain (hFE) (Min): 110 @ 2mA, 5V

Quality and Safety Features

Designed and manufactured to high quality standards

Robust construction for reliable operation

Compatibility

Compatible with a wide range of electronic circuits and systems

Application Areas

Small signal amplifier circuits

Switching circuits

Logic gates

General-purpose electronic device applications

Product Lifecycle

Currently in active production

Replacement or upgrade options may be available in the future

Key Reasons to Choose This Product

Excellent performance characteristics

Compact and space-saving package

Reliable operation in a wide temperature range

RoHS3 compliance for environmental friendliness

Widely compatible with various electronic applications