BC847ALT1G - onsemi

Manufacturer Part Number

BC847ALT1G

Manufacturer

onsemi

Introduction

The BC847ALT1G is a high-performance, low-power NPN bipolar transistor in a small surface-mount package.

Product Features and Performance

Wide operating temperature range of -55°C to 150°C

Low collector-emitter saturation voltage (VCE(sat)) of 600 mV at 5 mA, 100 mA

High DC current gain (hFE) of 110 minimum at 2 mA, 5 V

High transition frequency (fT) of 100 MHz

Low collector cutoff current (ICBO) of 15 nA maximum

Product Advantages

Excellent thermal and electrical performance in a compact surface-mount package

Suitable for a wide range of low-power, high-frequency applications

RoHS-compliant and lead-free for environmentally-friendly designs

Key Technical Parameters

Collector-Emitter Breakdown Voltage (VCEO): 45 V (max)

Collector Current (IC): 100 mA (max)

Power Dissipation: 300 mW

Quality and Safety Features

Compliant with RoHS3 directives

Reliable performance backed by onsemi's quality standards

Compatibility

Drop-in replacement for similar NPN bipolar transistors in SOT-23-3 package

Application Areas

Amplifiers

Switches

Logic gates

Low-power analog and digital circuits

Product Lifecycle

The BC847ALT1G is an active product, with no plans for discontinuation.

Replacement or upgrade options may be available from onsemi as technology evolves.

Key Reasons to Choose This Product

Excellent electrical and thermal performance in a compact package

Reliable and RoHS-compliant for environmentally-conscious designs

Suitable for a wide range of low-power, high-frequency applications

Backed by onsemi's quality standards and technical support