Manufacturer Part Number
2DC4617QLP-7
Manufacturer
Diodes Incorporated
Introduction
Discrete Semiconductor Product, Transistors - Bipolar (BJT) - Single
Product Features and Performance
RoHS3 Compliant
Manufacturer's packaging: X1-DFN1006-3
Package / Case: 3-UFDFN
Package: Tape & Reel (TR)
Operating Temperature: -55°C ~ 150°C (TJ)
Power Max: 250 mW
Voltage Collector Emitter Breakdown (Max): 50 V
Current Collector (Ic) (Max): 100 mA
Current Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Transistor Type: NPN
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency Transition: 100MHz
Mounting Type: Surface Mount
Product Advantages
RoHS3 Compliant
Compact 3-UFDFN package
Wide operating temperature range
High power handling capability
High voltage and current ratings
Low saturation voltage
High current gain
High transition frequency
Key Technical Parameters
Power Rating: 250 mW
Collector-Emitter Breakdown Voltage: 50 V
Collector Current (Max): 100 mA
Collector Cutoff Current: 100 nA
Vce Saturation Voltage: 200 mV
DC Current Gain: 120
Transition Frequency: 100 MHz
Quality and Safety Features
RoHS3 Compliant
Reliable surface mount package
Compatibility
Suitable for a wide range of electronic circuit designs
Application Areas
General-purpose amplifier and switching applications
Consumer electronics
Industrial control systems
Automotive electronics
Product Lifecycle
Currently available
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
RoHS3 compliant for environmental compatibility
Compact and reliable 3-UFDFN package
Wide operating temperature range for versatile applications
High power handling and voltage/current ratings
Low saturation voltage for efficient operation
High current gain and transition frequency for high-speed performance
Surface mount design for easy integration into PCBs