Manufacturer Part Number
2DB1188Q-13
Manufacturer
Diodes Incorporated
Introduction
Discrete Semiconductor Product
Bipolar Junction Transistor (BJT), Single
Product Features and Performance
RoHS3 Compliant
Surface Mount (SMT) Mounting
Operating Temperature Range: -55°C to 150°C
Power Rating: 1 Watt
Collector-Emitter Breakdown Voltage: 32 Volts
Collector Current: 2 Amps
Collector Cutoff Current: 100 nA
Collector-Emitter Saturation Voltage: 800 mV @ 200mA, 2A
DC Current Gain (hFE): 120 min @ 500mA, 3V
Transition Frequency: 120 MHz
Product Advantages
High power and current handling capability
Wide operating temperature range
Excellent electrical characteristics
Key Technical Parameters
Transistor Type: PNP
Package: SOT-89-3
Packaging: Tape & Reel
Quality and Safety Features
RoHS3 Compliant
Compatibility
Compatible with a wide range of electronic circuits and applications
Application Areas
Suitable for use in power amplifiers, switches, drivers, and other electronic circuits
Product Lifecycle
Current production model, no known discontinuation plans
Key Reasons to Choose This Product
High power and current handling capability
Wide operating temperature range
Excellent electrical characteristics
RoHS3 compliance
Compatibility with a wide range of applications