Manufacturer Part Number
2DB1182Q-13
Manufacturer
Diodes Incorporated
Introduction
High-performance PNP bipolar transistor
Product Features and Performance
Operating temperature range: -55°C to 150°C
Power rating: 10W
Collector-emitter breakdown voltage: 32V
Collector current (max): 2A
Collector cutoff current (max): 1A
VCE saturation voltage: 800mV @ 200mA, 2A
DC current gain: 120 min. @ 500mA, 3V
Transition frequency: 110MHz
Product Advantages
Robust design for high-power applications
High current and voltage handling capabilities
Excellent high-frequency performance
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 32V
Current Collector (Ic) (Max): 2A
Current Collector Cutoff (Max): 1A
Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 3V
Frequency Transition: 110MHz
Quality and Safety Features
RoHS3 compliant
Reliable and durable design
Compatibility
TO-252-3, DPak (2 Leads + Tab), SC-63 package
Surface mount design
Application Areas
High-power amplifiers
Power supplies
Industrial control systems
Automotive electronics
Product Lifecycle
Current production model
Replacements and upgrades may be available
Key Reasons to Choose This Product
Robust and reliable design for high-power applications
Excellent high-frequency performance
Wide operating temperature range
Compliance with RoHS3 standards
Surface mount packaging for easy integration
2DB1184 Q