2DA1797-13 - Diodes Incorporated

Manufacturer Part Number

2DA1797-13

Manufacturer

Diodes Incorporated

Introduction

Discrete Semiconductor Product

Transistor Bipolar (BJT) Single

Product Features and Performance

RoHS3 Compliant

SOT-89-3 Package

Operating Temperature: -55°C ~ 150°C (TJ)

Power Rating: 900 mW

Collector-Emitter Breakdown Voltage (Max): 50 V

Collector Current (Max): 3 A

Collector Cut-off Current (Max): 100 nA (ICBO)

Collector-Emitter Saturation Voltage (Max): 350 mV @ 50 mA, 1 A

Transistor Type: PNP

DC Current Gain (hFE) (Min): 82 @ 500 mA, 2 V

Transition Frequency: 160 MHz

Surface Mount Mounting

Product Advantages

Compact SOT-89-3 package

High power and current handling capability

Low saturation voltage

Wide operating temperature range

Key Technical Parameters

Power Rating: 900 mW

Collector-Emitter Breakdown Voltage: 50 V

Collector Current: 3 A

Transition Frequency: 160 MHz

Quality and Safety Features

RoHS3 Compliant

Compatibility

Compatible with various electronic circuits and systems requiring a high-performance PNP bipolar transistor

Application Areas

Suitable for use in power supplies, amplifiers, switches, and other electronic circuits

Product Lifecycle

This product is currently in production and available for purchase.

Key Reasons to Choose This Product

High power and current handling capability

Low saturation voltage for efficient operation

Wide operating temperature range for versatile applications

Compact SOT-89-3 package for space-constrained designs

RoHS3 compliance for environmentally-friendly use