Manufacturer Part Number
2DA1213Y-13
Manufacturer
Diodes Incorporated
Introduction
High-performance PNP bipolar junction transistor (BJT) suitable for various power amplifier and switching applications.
Product Features and Performance
Wide operating temperature range of -55°C to 150°C
High power handling capacity of 1 watt
High voltage capability up to 50 V collector-emitter breakdown voltage
High collector current of up to 2 A
Low collector-emitter saturation voltage of 500 mV at 50 mA, 1 A
High current gain (hFE) of 120 minimum at 500 mA, 2 V
High transition frequency of 160 MHz
Product Advantages
Excellent thermal and electrical characteristics for high-performance power applications
Compact and efficient surface mount package (SOT-89-3)
RoHS-3 compliant for environmentally friendly design
Key Technical Parameters
Power Rating: 1 W
Collector-Emitter Breakdown Voltage: 50 V
Collector Current (Max): 2 A
Collector Cutoff Current (Max): 100 nA
Current Gain (hFE): 120 (min) at 500 mA, 2 V
Transition Frequency: 160 MHz
Quality and Safety Features
RoHS-3 compliant for environmental responsibility
Reliable performance within the specified operating temperature range
Robust design for high-stress applications
Compatibility
Suitable for a wide range of power amplifier and switching circuit designs
Application Areas
Power amplifiers
Switching circuits
Power management systems
Industrial and consumer electronics
Product Lifecycle
This product is currently in active production and is not nearing discontinuation.
Replacement or upgrade options may be available from Diodes Incorporated or other manufacturers.
Key Reasons to Choose This Product
Excellent thermal and electrical characteristics for high-performance power applications
Compact and efficient surface mount package for space-constrained designs
RoHS-3 compliance for environmentally friendly design
Reliable and robust performance within the specified operating temperature range
Suitable for a wide range of power amplifier and switching circuit applications