Manufacturer Part Number
CY7C1520KV18-250BZI
Manufacturer
Infineon Technologies
Introduction
The CY7C1520KV18-250BZI is a high-performance, high-density synchronous SRAM memory device. It offers a large 72Mbit memory capacity with a parallel memory interface and 250MHz clock frequency, making it suitable for a wide range of applications that require high-speed, high-capacity volatile memory.
Product Features and Performance
72Mbit memory capacity
Synchronous SRAM (SSRAM) architecture
DDR II technology for enhanced performance
Parallel memory interface
250MHz clock frequency
7V to 1.9V operating voltage
Wide operating temperature range of -40°C to 85°C
Product Advantages
High memory density and capacity
High-speed performance with 250MHz clock
Low power consumption with 1.7V to 1.9V operating voltage
Wide operating temperature range for diverse applications
Key Reasons to Choose This Product
Meets the high-speed and high-capacity memory requirements of modern electronic systems
Reliable and robust design for industrial and commercial applications
Cost-effective solution for applications that need large, fast volatile memory
Quality and Safety Features
Rigorously tested to ensure reliable operation
Compliant with industry standards for quality and safety
Compatibility
The CY7C1520KV18-250BZI is designed to be compatible with a wide range of electronic systems and platforms that require high-speed, high-capacity volatile memory.
Application Areas
Networking and telecommunications equipment
Industrial automation and control systems
Medical imaging and diagnostic devices
High-performance computing and servers
Military and aerospace systems
Product Lifecycle
The CY7C1520KV18-250BZI is an obsolete product, meaning it is no longer in active production. However, there may be equivalent or alternative models available from Infineon Technologies or other manufacturers. Customers are advised to contact our website's sales team for more information on current product options and availability.
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