Manufacturer Part Number
CY7C1520KV18-333BZXI
Manufacturer
Infineon Technologies
Introduction
High-speed synchronous DDR II SRAM for advanced computing and communication systems
Product Features and Performance
High performance synchronous SRAM
DDR II architecture
Fast clock frequency of 333 MHz for rapid data access
72Mbit memory capacity for substantial data storage
Product Advantages
Large memory organization of 2M x 36 for efficient data organization
Compatible with high-speed digital systems due to synchronous operation
Low voltage supply operation from 1.7V to 1.9V
Key Technical Parameters
Memory Type: Volatile
Memory Format: SRAM
Technology: Synchronous DDR II
Memory Size: 72Mbit
Memory Organization: 2M x 36
Memory Interface: Parallel
Clock Frequency: 333 MHz
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature Range: -40°C to 85°C
Quality and Safety Features
Wide operating temperature range ensures reliability under extreme conditions
Designed for surface mounting, offering robust physical attachment
Compatibility
Compatible with various digital systems requiring high-speed memory access
Designed in standard 165-LBGA package for compatibility with standard PCB designs
Application Areas
Ideal for high-performance computing, networking, and telecommunications systems
Useful in applications requiring high-speed data buffering and storage
Product Lifecycle
Product status: Active
Not nearing discontinuation and with support for replacements and upgrades
Several Key Reasons to Choose This Product
High performance synchronous operation matching modern digital system requirements
Large memory size and fast access time enhancing overall system speed
Efficient and flexible memory organization suitable for various applications
Low power consumption beneficial for energy-sensitive projects
Reliable operating temperature range ensuring stability in diverse environments
Infineon Technologies' reputation for quality and reliability in semiconductor products
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