Manufacturer Part Number
CY7C1399-12VC
Manufacturer
Cypress Semiconductor
Introduction
High-speed, high-density SRAM memory device
Suitable for a wide range of applications that require fast, reliable data storage
Product Features and Performance
256Kbit of asynchronous SRAM memory
12ns access time
3V to 3.6V operating voltage
Wide operating temperature range of 0°C to 70°C
32K x 8 memory organization
Parallel memory interface
Product Advantages
Fast data access and storage
Low power consumption
Reliable performance across a wide temperature range
Compatibility with a variety of systems and applications
Key Technical Parameters
Memory Size: 256Kbit
Memory Organization: 32K x 8
Access Time: 12ns
Write Cycle Time: 12ns
Operating Voltage: 3V to 3.6V
Operating Temperature: 0°C to 70°C
Quality and Safety Features
RoHS non-compliant
28-BSOJ (0.300", 7.62mm Width) package
Surface mount packaging for reliable assembly
Compatibility
Compatible with a wide range of electronic systems and applications that require fast, reliable data storage
Application Areas
Embedded systems
Industrial control equipment
Communications equipment
Networking devices
Consumer electronics
Product Lifecycle
This product is an established SRAM solution from Cypress Semiconductor
Replacement or upgrade options may be available, but the product is not nearing discontinuation
Several Key Reasons to Choose This Product
High-speed data access and storage
Low power consumption
Reliable performance across a wide temperature range
Easy integration into various electronic systems and applications
Well-established product with ongoing support from the manufacturer