Manufacturer Part Number
CY7C1399B-12ZC
Manufacturer
Infineon Technologies
Introduction
The CY7C1399B-12ZC is a high-speed CMOS SRAM device from Infineon Technologies, designed for volatile memory applications.
Product Features and Performance
SRAM Asynchronous Technology
Memory Size: 256Kbit
Memory Organization: 32K x 8
Access Time: 12 ns
Write Cycle Time Word, Page: 12ns
Voltage Supply: 3V ~ 3.6V
Operating Temperature: 0°C ~ 70°C
Memory Interface: Parallel
Product Advantages
Fast access and write times enhance system performance
Compatible with a range of supply voltages for flexibility in system design
Suitable for operation across standard industrial temperature ranges
Key Technical Parameters
Memory Type: Volatile SRAM
Memory Format: SRAM Asynchronous
Memory Size: 256Kbit
Memory Organization: 32K x 8
Write Cycle Time Word, Page: 12ns
Access Time: 12 ns
Voltage Supply: 3V ~ 3.6V
Operating Temperature: 0°C ~ 70°C
Quality and Safety Features
Manufactured following rigorous industry standards for reliability and durability
Compatibility
Compatible with parallel memory interfaces
Suitable for applications requiring high-speed volatile memory in a standard temperature range
Application Areas
Embedded systems
Data storage systems
Industrial electronics
Product Lifecycle
Obsolete product status
Replacement or upgrade options may be limited, or need to source from existing stocks or alternative suppliers
Several Key Reasons to Choose This Product
Offers fast read and write cycles to enhance system performance
Supports a wide range of operating voltages, providing design flexibility
Reliable performance within the standard industrial temperature range
Infineon Technologies' proven manufacturing expertise ensuring product quality and durability
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