CY7C106B-25VC - Cypress Semiconductor Corp

Manufacturer Part Number

CY7C106B-25VC

Manufacturer

Infineon Technologies

Introduction

High-speed 1Mbit SRAM memory chip for various electronic applications

Product Features and Performance

Volatile memory type

Asynchronous SRAM technology

1Mbit memory size

Memory organization of 256K x 4

Parallel memory interface

25ns write cycle time

25ns access time

Surface mount mounting type

28-BSOJ package

Product Advantages

Fast access and write cycle for high-speed operations

Robust 1Mbit storage capacity

Convenient parallel interface for easy integration

Compatible with a wide range of operating voltages

Suitable for operating temperatures ranging from 0°C to 70°C

Key Technical Parameters

Memory Size: 1Mbit

Memory Organization: 256K x 4

Write Cycle Time: 25ns

Access Time: 25ns

Voltage Supply: 4.5V to 5.5V

Operating Temperature: 0°C to 70°C

Quality and Safety Features

Designed and manufactured by reputable Infineon Technologies

Compliant with industry safety and quality standards

Compatibility

Compatible with systems requiring fast SRAM with parallel interface

Adaptable to devices operating within the 4.5V to 5.5V power supply range

Mountable on boards with 28-BSOJ footprints

Application Areas

Embedded systems

High-speed data acquisition

Telecommunication equipment

Portable electronics

Gaming systems

Product Lifecycle

Status: Active

Not nearing discontinuation

Replacements or upgrades may be available within Infineon's CY7C106 series

Several Key Reasons to Choose This Product

Fast data access and write speed enhance system performance

Reliable storage solution from a leading semiconductor manufacturer

Versatile for a wide range of electronic applications

Excellent compatibility with various operating voltages and temperatures

Long product lifecycle with active status ensures future availability