Manufacturer Part Number
CY7C1079DV33-12BAXI
Manufacturer
Infineon Technologies
Introduction
High-speed 32Mbit SRAM memory chip designed for high-performance electronics.
Product Features and Performance
SRAM Asynchronous technology
High-density memory organization, 4M x 8-bit structure
Fast write cycle time and access time of 12ns
Surface mount 48-TFBGA package
Volatile memory type, data retained only while powered
Product Advantages
Sustains high-speed data transfers for computational tasks
Supports a wide range of operating temperatures for robust applications
Optimal power consumption with a 3V to 3.6V voltage supply range
Key Technical Parameters
Memory Size: 32Mbit
Write Cycle Time Word, Page: 12ns
Access Time: 12 ns
Voltage Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Memory Interface: Parallel
Quality and Safety Features
Reliable performance over varying temperatures and conditions
Compatibility
Compatible with systems that require high-density, fast access SRAM memory
Application Areas
Ideal for network routers, switches, industrial control systems, and high-speed computing.
Product Lifecycle
Active status
Future discontinuation notices, if any, will be announced as per the manufacturer's policy
Replacements or upgrades will align with technological advancements
Several Key Reasons to Choose This Product
Infineon's reputation for producing high-quality, reliable memory products
High-density memory solution ideal for space-constrained designs
Quick data access speed for performance-critical applications
Broad voltage supply range and temperature tolerance for diverse environments
Vigorous product support and longevity under active status
CY7C109-12ZCCypress Semiconductor
CY7C106D-10VXIInfineon TechnologiesIC SRAM 1MBIT PARALLEL 28SOJ
CY7C107-15VCCY