Manufacturer Part Number
CY62147CV30LL-70BAI
Manufacturer
Infineon Technologies
Introduction
The CY62147CV30LL-70BAI is a high-speed CMOS SRAM device with a 4Mbit storage capacity and asynchronous interface.
Product Features and Performance
Volatile Memory Type
Asynchronous SRAM Technology
4Mbit Memory Size
256K x 16 Memory Organization
Parallel Memory Interface
70ns Write Cycle Time
70ns Access Time
7V to 3.3V Supply Voltage Range
Supports -40°C to 85°C Operating Temperature
Surface Mount 48-TFBGA Package
Product Advantages
Optimized for fast access times
Low power MoBL® series
High reliability and performance
Supports wide temperature range for harsh environments
Key Technical Parameters
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Interface: Parallel
Voltage - Supply: 2.7V ~ 3.3V
Operating Temperature Range: -40°C ~ 85°C
Package: 48-TFBGA
Write Cycle Time: 70ns
Quality and Safety Features
Industry-standard packaging and quality control
Proven SRAM technology for safety-critical applications
Compatibility
Compatible with a wide range of microcontrollers and processors with parallel interfaces
Easily interfaced with many standard bus architectures
Application Areas
Embedded systems
Automotive electronics
Industrial control systems
Communication infrastructure
Medical devices
Product Lifecycle
Status: Active
Product in full production with no current indication of discontinuation
Replacements or upgrades might be offered as technology evolves
Several Key Reasons to Choose This Product
High-speed SRAM suitable for performance-intensive applications
Low power consumption ideal for battery-powered devices
Robust temperature range supports use in extreme environments
Proven reliability from Infineon Technologies
Broad compatibility with various electronic systems and components
Long-term availability for product longevity and maintenance