CY62147EV18LL-55BVXI - Infineon Technologies

Manufacturer Part Number

CY62147EV18LL-55BVXI

Manufacturer

Infineon Technologies

Introduction

High-speed 4Mbit SRAM Memory Chip

Product Features and Performance

4Mbit storage capacity

256K x 16 memory organization

Asynchronous SRAM technology

55ns access time for fast read and write operations

Parallel memory interface for efficient data transfer

Supports broad voltage supply range from 1.65V to 2.25V

Designed for high-performance applications

Product Advantages

Low power consumption due to MoBL® Series design

Improved system reliability with stable volatile memory technology

Enhances device performance with quick write cycle times

Suitable for harsh environments with an operating temperature range of -40°C to 85°C

Key Technical Parameters

Memory Size: 4Mbit

Configuration: 256K x 16

Write Cycle Time: 55ns

Voltage Supply Range: 1.65V to 2.25V

Access Time: 55 ns

Memory Format: SRAM

Technology: SRAM - Asynchronous

Quality and Safety Features

Robust design ensuring long-term reliability

Operational across wide temperature spectrum

Complies with industry standards for electronic components

Compatibility

Compatible with various microcontrollers and processors

Useful for applications requiring a parallel memory interface

Application Areas

Consumer electronics

Automotive systems

Industrial automation

Networking equipment

Medical devices

Product Lifecycle

Product Status: Active

No indication of discontinuation, with support and updates available

Several Key Reasons to Choose This Product

Offers fast access times ideal for performance-intensive applications

Built by a reputable manufacturer known for quality in semiconductor technology

Highly versatile across numerous application areas

Engineered for power efficiency without sacrificing performance

Robust package suitable for surface mounting in compact device designs