BAT68E6327HTSA1 - Infineon

Manufacturer Part Number

BAT68E6327HTSA1

Manufacturer

Infineon Technologies

Introduction

The BAT68E6327HTSA1 is a high-performance Schottky diode from Infineon Technologies. It is designed for use in a variety of RF and high-frequency applications, offering excellent switching characteristics and low forward voltage drop.

Product Features and Performance

Schottky diode with single junction

Peak reverse voltage: 8V

Maximum forward current: 130mA

Low junction capacitance: 1pF @ 0V, 1MHz

Low forward resistance: 10Ohm @ 5mA, 10kHz

Maximum power dissipation: 150mW

Operating temperature range: -40°C to +150°C

Product Advantages

Excellent switching performance for high-frequency applications

Low forward voltage drop for efficient power conversion

Compact and space-saving TO-236-3 (SC-59, SOT-23-3) package

Key Reasons to Choose This Product

Reliable and durable Schottky diode from a trusted manufacturer

Suitable for a wide range of RF and high-frequency circuits

Optimized for efficient power conversion and signal processing

Compact packaging for space-constrained designs

Quality and Safety Features

RoHS-compliant and lead-free construction

Tested and qualified to meet stringent quality standards

Compatibility

The BAT68E6327HTSA1 is compatible with a variety of electronic circuits and systems that require high-performance Schottky diodes, including RF amplifiers, mixers, detectors, and power conversion circuits.

Application Areas

RF and high-frequency circuits

Power conversion and management

Signal processing and detection

Telecommunications equipment

Industrial and consumer electronics

Product Lifecycle

The BAT68E6327HTSA1 is an active product, and Infineon Technologies continues to manufacture and support this model. There are no immediate plans for discontinuation. Customers are advised to contact our website's sales team for the latest information on product availability and potential alternative or equivalent models.