BAT68E6327 - Infineon Technologies

Manufacturer Part Number

BAT68E6327

Manufacturer

Infineon Technologies

Introduction

This product is a Schottky diode, a type of discrete semiconductor device.

Product Features and Performance

Operating temperature up to 150°C

Power dissipation up to 150 mW

Low junction capacitance of 1 pF at 0V, 1 MHz

Peak reverse voltage of 8V

Forward resistance of 10 Ohm at 5 mA, 10 kHz

Maximum forward current of 130 mA

Product Advantages

Capable of high-temperature operation

Low junction capacitance for high-frequency applications

High reverse voltage and low forward resistance for efficient performance

Key Technical Parameters

Discrete Semiconductor Product

Schottky Diode Single

Package: PG-SOT23-3-1, TO-236-3, SC-59, SOT-23-3

Quality and Safety Features

Reliable performance within specified operating parameters

Compatibility

Suitable for a variety of RF and high-frequency applications

Application Areas

RF circuits

High-frequency electronics

Power supply circuits

Product Lifecycle

Current production model, no plans for discontinuation

Replacement or upgrade models may be available in the future

Several Key Reasons to Choose This Product

Capable of high-temperature operation

Low junction capacitance for high-frequency performance

High reverse voltage and low forward resistance for efficient operation

Reliable quality and safety within specified parameters

Compatibility with a variety of RF and high-frequency applications