Manufacturer Part Number
SPP21N10
Manufacturer
Infineon Technologies
Introduction
The SPP21N10 is a high-performance N-Channel MOSFET transistor from Infineon Technologies, designed for a wide range of power electronics and switching applications.
Product Features and Performance
N-Channel MOSFET construction
Drain-to-Source voltage rating of 100V
Maximum Gate-to-Source voltage of ±20V
On-resistance (Rds(on)) of 80mOhm at 15A, 10V
Continuous Drain Current (ID) of 21A at 25°C
Input Capacitance (Ciss) of 865pF at 25V
Power Dissipation (Ptot) of 90W at 25°C
Product Advantages
Excellent on-state resistance for high efficiency
High voltage and current handling capabilities
Robust design for reliable operation
Suitable for a wide range of power conversion applications
Key Technical Parameters
Voltage Rating: 100V Drain-to-Source
Current Rating: 21A Continuous Drain Current
On-Resistance: 80mOhm max. @ 15A, 10V
Gate Threshold Voltage: 4V max. @ 44A
Operating Temperature: -55°C to 175°C
Quality and Safety Features
Robust MOSFET construction for high reliability
Compliance with relevant safety and environmental standards
Compatibility
Suitable for a wide range of power electronics and switching applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters and converters
Power factor correction circuits
General-purpose power switching
Product Lifecycle
Currently available and in active production
No plans for discontinuation at this time
Replacement or upgrade options may be available in the future
Key Reasons to Choose This Product
Excellent performance-to-cost ratio
Proven reliability and long-term durability
Wide operating temperature range
Suitable for high-power, high-efficiency applications
Easy integration and compatibility with various circuit designs
SPP2301AS23RGSYNC