Manufacturer Part Number
SPP20N60S5
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel CoolMOS power MOSFET transistor with advanced silicon technology for high-efficiency power conversion applications.
Product Features and Performance
High voltage rating (650V) for wide range of power applications
Low on-resistance (190mOhm) for high efficiency
High continuous drain current (20A) for high power handling
Wide operating temperature range (-55°C to 150°C)
Low input capacitance (3000pF) for fast switching
High power dissipation (208W) for high power density
Product Advantages
Excellent energy efficiency and low conduction losses
Improved thermal management for increased power density
Fast and reliable switching for high-frequency power conversion
Robust and reliable operation in harsh environments
Key Technical Parameters
Drain to Source Voltage (Vdss): 650V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 190mOhm
Continuous Drain Current (Id): 20A
Input Capacitance (Ciss): 3000pF
Power Dissipation (Ptot): 208W
Quality and Safety Features
Reliable and rugged construction for long-term operation
Designed and tested to meet safety and quality standards
Compatibility
Suitable for a wide range of power conversion and control applications
Compatible with various control and driver circuits
Application Areas
Switched-mode power supplies (SMPS)
Motor drives
Inverters
Power factor correction (PFC) circuits
Industrial and consumer electronics
Product Lifecycle
Currently in active production
Replacement or upgrade options available from Infineon
Key Reasons to Choose This Product
High efficiency and low power losses for energy-saving designs
Excellent power handling and thermal performance for high-power applications
Fast and reliable switching for high-frequency power conversion
Robust and reliable operation in harsh environments
Comprehensive safety and quality features for long-term reliability
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