Manufacturer Part Number
SPP04N60S5
Manufacturer
Infineon Technologies
Introduction
High-voltage N-channel MOSFET with CoolMOS technology
Product Features and Performance
High voltage capability up to 600V
Low on-state resistance for low conduction losses
Fast switching behavior for high-frequency applications
Optimized for hard-switching applications
Product Advantages
Excellent efficiency through low switching and conduction losses
High reliability and ruggedness
Compact design enabled by high power density
Key Technical Parameters
Drain-Source Voltage (Vdss): 600V
Maximum Gate-Source Voltage (Vgs): ±20V
On-State Resistance (Rds(on)): 950mΩ @ 2.8A, 10V
Continuous Drain Current (Id): 4.5A (Tc)
Input Capacitance (Ciss): 580pF @ 25V
Power Dissipation (Tc): 50W
Quality and Safety Features
RoHS3 compliant
Rugged design for high reliability
Compatibility
Through-hole mounting (TO-220-3 package)
Application Areas
Switching power supplies
Motor drives
Inductive heating
Power factor correction
Welding equipment
Product Lifecycle
Currently available
No discontinuation or replacement plans announced
Key Reasons to Choose This Product
High voltage and current handling capability
Excellent efficiency through low losses
Compact design and high power density
Rugged and reliable performance
Suitable for a wide range of high-power switching applications
