Manufacturer Part Number
SPP04N60C2
Manufacturer
Infineon Technologies
Introduction
The SPP04N60C2 is a discrete N-channel MOSFET transistor from Infineon Technologies, designed for a wide range of power switching applications.
Product Features and Performance
600V drain-to-source voltage rating
950 mΩ maximum on-resistance at 2.8A, 10V
5A continuous drain current at 25°C
580 pF maximum input capacitance at 25V
50W maximum power dissipation at Tc
Product Advantages
Robust and reliable performance
Low on-resistance for efficient power switching
Wide operating temperature range of -55°C to 150°C
Suitable for various power conversion and control applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 600V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 950 mΩ @ 2.8A, 10V
Continuous Drain Current (Id): 4.5A @ 25°C
Input Capacitance (Ciss): 580 pF @ 25V
Power Dissipation (Tc): 50W
Quality and Safety Features
RoHS non-compliant
Through-hole (PG-TO220-3-1) package
Compatibility
Suitable for a wide range of power switching applications
Application Areas
Power supplies
Motor drives
Lighting
Industrial automation
Renewable energy systems
Product Lifecycle
The SPP04N60C2 is an active product and is not nearing discontinuation.
Replacement or upgrade options may be available from Infineon or other MOSFET manufacturers.
Key Reasons to Choose This Product
Robust and reliable performance
Low on-resistance for efficient power switching
Wide operating temperature range
Suitable for various power conversion and control applications
Availability of replacement or upgrade options
