Manufacturer Part Number
SPI11N60S5
Manufacturer
Infineon Technologies
Introduction
The SPI11N60S5 is a high-performance N-channel MOSFET from Infineon Technologies, designed for a wide range of power electronics applications.
Product Features and Performance
High breakdown voltage of 600V
Low on-resistance of 380mΩ @ 7A, 10V
Wide operating temperature range of -55°C to 150°C
High current handling capacity of 11A continuous drain current
Low input capacitance of 1460pF @ 25V
Maximum power dissipation of 125W
Product Advantages
Excellent energy efficiency due to low on-resistance
Reliable operation across a wide temperature range
Suitable for high-voltage, high-current applications
Compact and versatile package design
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 600V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 380mΩ @ 7A, 10V
Drain Current (Id): 11A (continuous at 25°C)
Input Capacitance (Ciss): 1460pF @ 25V
Power Dissipation (Tc): 125W
Quality and Safety Features
RoHS3 compliant
Robust and reliable design for long-term performance
Compatibility
Compatible with a wide range of power electronics applications
Application Areas
Switch-mode power supplies (SMPS)
Motor drives
Inverters
Industrial power electronics
Renewable energy systems
Product Lifecycle
The SPI11N60S5 is an active product and is not near discontinuation.
Replacement or upgraded products may become available in the future, but the SPI11N60S5 remains a reliable and widely used option.
Key Reasons to Choose This Product
Excellent energy efficiency and low power losses due to the low on-resistance
Wide operating temperature range for reliable performance in diverse environments
High voltage and current handling capabilities, making it suitable for demanding applications
Compact and versatile package design for easy integration into various systems
Robust and reliable design for long-term performance and safety
