Manufacturer Part Number
SPI08N80C3
Manufacturer
Infineon Technologies
Introduction
High performance N-channel MOSFET transistor designed for high-voltage power conversion applications.
Product Features and Performance
Operates at high voltages up to 800V
Low on-resistance of 650mΩ at 5.1A, 10V
High continuous drain current of 8A at 25°C
Wide operating temperature range of -55°C to 150°C
Fast switching with low gate charge of 60nC at 10V
Robust design with high power dissipation of 104W
Product Advantages
Enables efficient high-voltage power conversion
Provides high power density and reliability
Supports a wide range of industrial and consumer applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 800V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 650mΩ
Continuous Drain Current (Id): 8A
Input Capacitance (Ciss): 1100pF
Power Dissipation (Tc): 104W
Quality and Safety Features
Robust metal-oxide-semiconductor field-effect transistor (MOSFET) technology
High temperature and voltage operation
High reliability and ruggedness
Compatibility
Compatible with a wide range of high-voltage power conversion and control applications.
Application Areas
Switch-mode power supplies
Motor drives
Household appliances
Industrial automation and control
Renewable energy systems
Product Lifecycle
This product is currently in active production with no plan for discontinuation. Replacement or upgrade options may be available.
Key Reasons to Choose this Product
Excellent high-voltage performance with low on-resistance
High power density and efficiency for compact designs
Wide operating temperature range for industrial use
Fast switching for high-frequency power conversion
Robust and reliable MOSFET technology
