SPD50N03S2-07G - Infineon Technologies

Manufacturer Part Number

SPD50N03S2-07G

Manufacturer

Infineon Technologies

Introduction

High-performance N-channel MOSFET transistor in a TO-252-3 package.

Product Features and Performance

Operating temperature range of -55°C to 175°C

Drain-to-source voltage (Vdss) of 30V

Maximum gate-to-source voltage (Vgs) of ±20V

Low on-resistance (Rds(on)) of 7.3mΩ at 50A, 10V

Continuous drain current (Id) of 50A at 25°C (Tc)

Input capacitance (Ciss) of 2170pF at 25V

Power dissipation (Tc) of 136W

N-channel MOSFET technology

Gate threshold voltage (Vgs(th)) of 4V at 85A

Gate charge (Qg) of 46.5nC at 10V

Product Advantages

Excellent performance and efficiency

High power density

Compact TO-252-3 (DPak) package

Reliable and robust design

Key Technical Parameters

Drain-to-source voltage (Vdss): 30V

Gate-to-source voltage (Vgs): ±20V

On-resistance (Rds(on)): 7.3mΩ @ 50A, 10V

Continuous drain current (Id): 50A @ 25°C (Tc)

Input capacitance (Ciss): 2170pF @ 25V

Power dissipation (Tc): 136W

Quality and Safety Features

RoHS3 compliant

Reliable and durable design

Compatibility

Surface mount (SMT) package

Suitable for a wide range of power electronics applications

Application Areas

Power supplies

Inverters

Motor drives

Switching regulators

Industrial and consumer electronics

Product Lifecycle

Currently in production

Replacement and upgrade options available

Key Reasons to Choose This Product

Excellent performance and efficiency

Compact and reliable package

Wide operating temperature range

Suitable for high-power applications

RoHS3 compliance for environmental safety