Manufacturer Part Number
SPD50N03S2-07
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel OptiMOS power MOSFET with low RDS(on) for efficient power conversion applications
Product Features and Performance
Low on-resistance for high efficiency
High current capability up to 50A
Wide operating temperature range of -55°C to 175°C
Low input capacitance for fast switching
Robust design for reliable operation
Product Advantages
Excellent thermal performance
Efficient power conversion
High reliability
Fast switching capability
Key Technical Parameters
Drain-to-Source Voltage (VDS): 30V
Gate-to-Source Voltage (VGS): ±20V
On-Resistance (RDS(on)): 7.3mΩ @ 50A, 10V
Continuous Drain Current (ID): 50A
Input Capacitance (Ciss): 2170pF @ 25V
Power Dissipation (Pd): 136W
Quality and Safety Features
Robust design for reliable operation
Compliance with relevant safety standards
Compatibility
Suitable for a wide range of power conversion applications
Application Areas
Efficient power conversion in industrial, automotive, and consumer electronics
Product Lifecycle
Currently available
Replacement and upgrade options may be available
Key Reasons to Choose This Product
Excellent efficiency and thermal performance
High current capability for demanding applications
Fast switching capability for high-frequency power conversion
Reliable and robust design for long-term operation
Broad operating temperature range for versatile use