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Home Products Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single~~SPD18P06PGBTMA1~~

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SPD18P06PGBTMA1 - Infineon Technologies

Name: Infineon Technologies SPD18P06PGBTMA1
Brand: Infineon Technologies
SKU: SPD18P06PGBTMA1
Availability: InStock
Rating: 5 (4 reviews)

Manufacturer Part Number: SPD18P06PGBTMA1

Manufacturer: Infineon Technologies

Allelco Part Number: 32D-SPD18P06PGBTMA1

ECAD Model

Parts Description: MOSFET P-CH 60V 18.6A TO252-3

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Data sheet: ~~SPD18P06PGBTMA1.pdf~~

RoHs Status: ROHS3 Compliant

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Specifications

SPD18P06PGBTMA1 Tech Specifications
Infineon Technologies - SPD18P06PGBTMA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies - SPD18P06PGBTMA1

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Vgs(th) (Max) @ Id	4V @ 1mA
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
Supplier Device Package	PG-TO252-3
Series	SIPMOS®
Rds On (Max) @ Id, Vgs	130mOhm @ 13.2A, 10V
Power Dissipation (Max)	80W (Tc)
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Package	Tape & Reel (TR)

Product Attribute	Attribute Value
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Input Capacitance (Ciss) (Max) @ Vds	860 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	33 nC @ 10 V
FET Type	P-Channel
FET Feature	-
Drive Voltage (Max Rds On, Min Rds On)	10V
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	18.6A (Tc)
Base Product Number	SPD18P06

Environmental & Export Classifications

ATTRIBUTE	DESCRIPTION
RoHs Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS

Parts Introduction

Manufacturer Part Number

SPD18P06PGBTMA1

Manufacturer

Infineon Technologies

Introduction

Discrete Semiconductor Product

Transistors FETs, MOSFETs Single

Product Features and Performance

P-Channel MOSFET

60V Drain to Source Voltage

130mOhm on-resistance at 13.2A, 10V

6A continuous drain current at 25°C

860pF input capacitance at 25V

80W power dissipation

-55°C to 175°C operating temperature

Product Advantages

Low on-resistance

High current handling capability

Wide operating temperature range

Key Technical Parameters

Vdss: 60V

Vgs (Max): ±20V

Rds On (Max): 130mOhm

Id (Continuous): 18.6A

Ciss (Max): 860pF

Power Dissipation (Max): 80W

Quality and Safety Features

RoHS3 Compliant

Compatibility

TO-252-3, DPak (2 Leads + Tab), SC-63 package

Application Areas

Suitable for various power electronics and control applications

Product Lifecycle

Current product, no discontinuation information available

Key Reasons to Choose

Excellent performance in terms of low on-resistance, high current handling, and wide operating temperature range

Suitable for a wide range of power electronics and control applications

RoHS3 compliance for environmental sustainability

Parts with Similar Specifications

The three parts on the right have similar specifications to Infineon Technologies SPD18P06PGBTMA1

Product Attribute
Part Number	SPD18P06PGBTMA1	SPD25N06S2-40	SPD18P06PG	SPD18P06P
Manufacturer	Infineon Technologies	Infineon Technologies	Infineon Technologies	Infineon Technologies
Vgs (Max)	±20V	±20V	-	±20V
Package	Tape & Reel (TR)	Tape & Reel (TR)	-	Tape & Reel (TR)
Power Dissipation (Max)	80W (Tc)	68W (Tc)	-	80W (Tc)
Supplier Device Package	PG-TO252-3	PG-TO252-3-11	-	PG-TO252-3
Drain to Source Voltage (Vdss)	60 V	55 V	-	60 V
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63	TO-252-3, DPak (2 Leads + Tab), SC-63	-	TO-252-3, DPak (2 Leads + Tab), SC-63
Input Capacitance (Ciss) (Max) @ Vds	860 pF @ 25 V	710 pF @ 25 V	-	860 pF @ 25 V
Operating Temperature	-55°C ~ 175°C (TJ)	-55°C ~ 175°C (TJ)	-	-55°C ~ 175°C (TJ)
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	-	MOSFET (Metal Oxide)
Rds On (Max) @ Id, Vgs	130mOhm @ 13.2A, 10V	40mOhm @ 13A, 10V	-	130mOhm @ 13.2A, 10V
Base Product Number	SPD18P06	SPD25N	-	SPD18P
Mounting Type	Surface Mount	Surface Mount	-	Surface Mount
Gate Charge (Qg) (Max) @ Vgs	33 nC @ 10 V	18 nC @ 10 V	-	33 nC @ 10 V
Series	SIPMOS®	OptiMOS™	-	SIPMOS®
Current - Continuous Drain (Id) @ 25°C	18.6A (Tc)	29A (Tc)	-	18.6A (Tc)
Vgs(th) (Max) @ Id	4V @ 1mA	4V @ 26µA	-	4V @ 1mA
Drive Voltage (Max Rds On, Min Rds On)	10V	10V	-	10V
FET Feature	-	-	-	-
FET Type	P-Channel	N-Channel	-	P-Channel

SPD18P06PGBTMA1 Datasheet PDF

Download SPD18P06PGBTMA1 pdf datasheets and Infineon Technologies documentation for SPD18P06PGBTMA1 - Infineon Technologies.

Other Related Documents: Part Number Guide.pdf
PCN Packaging: Cover Tape Width Update 17/Jun/2015.pdf Mult Dev Pkg Box Chg 3/Jan/2018.pdf

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Region	Country	Logistic Time(Day)
America	United States	5
America	Brazil	7
Europe	Germany	5
	United Kingdom	4
	Italy	5
Oceania	Australia	6
Oceania	New Zealand	5
Asia	India	4
Asia	Japan	4
Middle East	Israel	6

DHL & FedEx Shipment Charges Reference
Shipment charges(KG)	Reference DHL(USD$)
0.00kg-1.00kg	USD$30.00 - USD$60.00
1.00kg-2.00kg	USD$40.00 - USD$80.00
2.00kg-3.00kg	USD$50.00 - USD$100.00

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