Manufacturer Part Number
SPD18P06P
Manufacturer
Infineon Technologies
Introduction
This is a P-channel MOSFET transistor from Infineon Technologies, part of the SIPMOS series.
Product Features and Performance
Operating temperature range of -55°C to 175°C
Drain-to-source voltage (Vdss) of 60V
Gate-to-source voltage (Vgs) range of ±20V
On-resistance (Rds(on)) of 130mΩ @ 13.2A, 10V
Continuous drain current (Id) of 18.6A at 25°C
Input capacitance (Ciss) of 860pF @ 25V
Power dissipation of 80W at Tc
Product Advantages
Low on-resistance for efficient power switching
Wide operating temperature range
High drain current capability
Surface mount package for compact designs
Key Technical Parameters
MOSFET technology
P-channel FET type
Threshold voltage (Vgs(th)) of 4V @ 1mA
Gate charge (Qg) of 33nC @ 10V
TO-252-3 (D-Pak) surface mount package
Quality and Safety Features
RoHS compliant
AEC-Q101 qualified
Compatibility
Compatible with various power supply, motor control, and industrial applications
Application Areas
Power supplies
Motor drives
Industrial automation
Automotive electronics
Product Lifecycle
This product is currently available and not nearing discontinuation.
Replacement or upgrade options may be available from Infineon Technologies.
Key Reasons to Choose This Product
High current handling capability
Efficient power switching performance
Wide operating temperature range
Compact surface mount package
Proven reliability and quality from Infineon Technologies
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