SPB80P06PGATMA1 - Infineon Technologies

Manufacturer Part Number

SPB80P06PGATMA1

Manufacturer

Infineon Technologies

Introduction

This is a discrete semiconductor product, specifically a single P-channel MOSFET transistor.

Product Features and Performance

60V drain-to-source voltage

Maximum gate-to-source voltage of ±20V

Low on-resistance of 23mOhm @ 64A, 10V

High continuous drain current of 80A at 25°C case temperature

High input capacitance of 5033pF @ 25V

High power dissipation of 340W at case temperature

Product Advantages

Efficient power handling and low power loss

Suitable for high current switching applications

Wide operating temperature range of -55°C to 175°C

Key Technical Parameters

MOSFET technology

P-channel FET type

Threshold voltage of 4V @ 5.5mA

Drive voltage range of 10V for optimal on-resistance

Gate charge of 173nC @ 10V

Quality and Safety Features

RoHS3 compliant

PG-TO263-3-2 package for surface mount application

Compatibility

Compatible with TO-263-3, DPak (2 Leads + Tab), TO-263AB package types

Application Areas

Suitable for high current, high efficiency power conversion and control applications

Applicable in industrial, automotive, and consumer electronics

Product Lifecycle

Current product, no plans for discontinuation

Replacement or upgrade options available from Infineon

Key Reasons to Choose This Product

Excellent power handling and efficiency

Wide operating temperature range

Compact surface mount package

Robust and reliable performance

Available from a reputable semiconductor manufacturer, Infineon Technologies